HM3407B mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -30V,ID = -4.1A RDS(ON) < 95mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V
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S Schematic diagram
* High Power and current handing capability
* Lead free.
GENERAL FEATURES
* VDS = -30V,ID = -4.1A RDS(ON) < 95mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V
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S Schematic diag.
The HM3407B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* VDS = -30V,ID = -4.1A RDS(ON) < 95mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V
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