HM4302B mosfet equivalent, n-channel enhancement mode power mosfet.
*VDS =30V,ID =25A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 7.0mΩ @ VGS=5V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage an.
HM4302B
GENERAL FEATURES
*VDS =30V,ID =25A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 7.0mΩ @ VGS=5V
* High density .
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