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HM4302B - N-Channel Enhancement Mode Power MOSFET

General Description

The HM4302B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =30V,ID =25A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 7.0mΩ @ VGS=5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.

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N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4302B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. HM4302B GENERAL FEATURES ●VDS =30V,ID =25A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 7.