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HM4410 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Package Dimensions Marking : DD D D 8765 Date Code 4410 12 3 4 SS SG REF. A B C D E F Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Maximum Ratings and Thermal Characteris.

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Other Datasheets by H&M Semiconductor

Part Number Description
HM4410A N-Channel Enhancement Mode Power MOSFET
HM4410B N-Channel Enhancement Mode Power MOSFET
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30V N-Channel Enhancement-Mode MOSFET 30V N MOS HM4410 VDS= 30V RDS(ON), Vgs@10V, Ids@12A = 9.0mΩ RDS(ON), Vgs@4.5V, Ids@10A = 12mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Package Dimensions Marking : DD D D 8765 Date Code 4410 12 3 4 SS SG REF. A B C D E F Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP.