VBsemi Electronics HM4488
N-Channel 150-V MOSFET
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Extremely Low Qgd for Switching Losses
● 100 % Rg Tested
● 100 % Avalanche Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Primary Side Switch D G S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 150 V VGS ± 20 TC = 25 °C 7.7 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 6.1 5.5b, c Pulsed Drain Current TA = 70 °C 4.5b, c A IDM 50 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 4.5 2.6b, c Single Pulse Avalanche Current L = 0.1 mH IAS 20 Single Pulse Avalanche Energy EAS 20 mJ TC = 25 °C 5.9 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 3.8 3.1b, c W TA = 70 °C 2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f t ≤ 10 s Maximum Junction-to-Foot (Drain) Steady State Notes: a.