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HM4488-VB
HM4488-VB Datasheet N-Channel 150 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
150
0.040 at VGS = 10 V
0.035 at VGS = 8 V
ID (A)a 7.7 7.5
Qg (Typ.) 23 nC
S1 S2 S3 G4
SO-8
Top View
8D 7D 6D 5D
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Extremely Low Qgd for Switching Losses • 100 % Rg Tested • 100 % Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
150
V
VGS
± 20
TC = 25 °C
7.7
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
6.1 5.5b, c
Pulsed Drain Current
TA = 70 °C
4.