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HM4488

Manufacturer: H&M Semiconductor

HM4488 datasheet by H&M Semiconductor.

HM4488 datasheet preview

HM4488 Datasheet Details

Part number HM4488
Datasheet HM4488-HMSemiconductor.pdf
File Size 450.46 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
HM4488 page 2 HM4488 page 3

HM4488 Overview

The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM4488 Key Features

  • VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Low gate to drain charge to reduce switching losses
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply

HM4488 from other manufacturers

View HM4488 datasheet index

Brand Logo Part Number Description Other Manufacturers
VBsemi Logo HM4488 N-Channel 150-V MOSFET VBsemi
H&M Semiconductor logo - Manufacturer

More Datasheets from H&M Semiconductor

View all H&M Semiconductor datasheets

Part Number Description
HM4480 N-Channel Enhancement Mode Power MOSFET
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HM4485 P-Channel Enhancement Mode Power MOSFET
HM4485A P-Channel Enhancement Mode Power MOSFET
HM4485B P-Channel Enhancement Mode Power MOSFET
HM4485C MOSFET
HM4485E MOSFET
HM4486A N-Channel Enhancement Mode Power MOSFET
HM4486E N-Channel Enhancement Mode Power MOSFET

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