HM4488
HM4488 is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description
The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V
（Typ：31mΩ）
Schematic diagram
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses
+0
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Marking and pin assignment
100% ΔVds TESTED!
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
+0
+0
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain...
