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HM4488 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: +0 N-Channel Enhancement Mode Power MOSFET.

General Description

The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Key Features

  • VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V （Typ：31mΩ） Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Low gate to drain charge to reduce switching losses +0.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
VBsemi Logo HM4488 N-Channel 150-V MOSFET VBsemi

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HM4488 Distributor