HM4487A
HM4487A is P-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description
The HM4487A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
General Features
- VDS =-100V,ID =-7.5A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=-4.5V (Typ:48mΩ)
- Super high dense cell design
- Advanced trench process technology
- Reliable and rugged
- High density cell design for ultra low On-Resistance
S Schematic diagram
Application
- Power management in notebook puter
- Portable equipment and battery powered systems
Marking and pin Assignment
100% UIS TESTED! 100% ∆Vds TESTED!
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
SOP8
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source...
