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HM4487B

Manufacturer: H&M Semiconductor

HM4487B datasheet by H&M Semiconductor.

HM4487B datasheet preview

HM4487B Datasheet Details

Part number	HM4487B
Datasheet	HM4487B-HMSemiconductor.pdf
File Size	469.55 KB
Manufacturer	H&M Semiconductor
Description	P-Channel Enhancement Mode Power MOSFET

HM4487B Overview

The HM4487B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM4487B Key Features

VDS =-100V,ID =-3.5A RDS(ON) <200mΩ @ VGS=-10V
Super high dense cell design
Advanced trench process technology
Reliable and rugged
High density cell design for ultra low On-Resistance
Power management in notebook puter
Portable equipment and battery powered systems
Tape width
Quantity

HM4487 from other manufacturers

View HM4487 datasheet index

Brand Logo	Part Number	Description	Other Manufacturers
	HM4487	P-Channel 100V MOSFET	VBsemi

More Datasheets from H&M Semiconductor

View all H&M Semiconductor datasheets

Part Number	Description
HM4487	P-Channel Enhancement Mode Power MOSFET
HM4487A	P-Channel Enhancement Mode Power MOSFET
HM4480	N-Channel Enhancement Mode Power MOSFET
HM4482	N-Channel Enhancement Mode Power MOSFET
HM4484	N-Channel Enhancement Mode Power MOSFET
HM4485	P-Channel Enhancement Mode Power MOSFET
HM4485A	P-Channel Enhancement Mode Power MOSFET
HM4485B	P-Channel Enhancement Mode Power MOSFET
HM4485C	MOSFET
HM4485E	MOSFET

HM4487B Distributor