HM4482 Datasheet | H&M Semiconductor

Features z VDSS=100V／VGSS=±20V／ID=2.5A RDS(ON)=105mΩ(Max.)@VGS=10V RDS(ON)=115mΩ(Max.)@VGS=4.5V z ESD protect z Reliable and Rugged z High Density Cell Design For Ultra Low On-Resistance Switching Time Test Circuit and Waveforms SOP-8 top view Rev. A.0 - Feb., 2012 SOP-8 - 1 - - 100VDS／±20VGS／2.5A(ID) N-Channel Enha ncement Mode MOSFET Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol VDSS VGSS Drain-Source Voltage Gate - Source Voltage Parameter ID1 Continuous Drain Current IDM1 300us Pulsed Drain Current Tested IS1 Diode Continuous Forward Current EAS2 Avalanche Energy, Single Plused(L=0.3m H) TJ Operating Junction Temperature TSTG Storage Temperature Range Note: 1: Surface Mounted on 1in2 pad area, t ≦ 10sec.. TC=70°C TC=25°C Typical 100 ±20 1.8 3 30 150 -55 ~ 150 2: UIS tested and pluse width limited by maximum...