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HM4487

Manufacturer: H&M Semiconductor

HM4487 datasheet by H&M Semiconductor.

HM4487 datasheet preview

HM4487 Datasheet Details

Part number HM4487
Datasheet HM4487-HMSemiconductor.pdf
File Size 419.93 KB
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
HM4487 page 2 HM4487 page 3

HM4487 Overview

The HM4487 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM4487 Key Features

  • VDS =-100V,ID =-4.5A RDS(ON) <100mΩ @ VGS=-10V
  • Super high dense cell design
  • Advanced trench process technology
  • Reliable and rugged
  • High density cell design for ultra low On-Resistance
  • Power management in notebook puter
  • Portable equipment and battery powered systems
  • Tape width
  • Quantity

HM4487 from other manufacturers

View HM4487 datasheet index

Brand Logo Part Number Description Other Manufacturers
VBsemi Logo HM4487 P-Channel 100V MOSFET VBsemi
H&M Semiconductor logo - Manufacturer

More Datasheets from H&M Semiconductor

View all H&M Semiconductor datasheets

Part Number Description
HM4487A P-Channel Enhancement Mode Power MOSFET
HM4487B P-Channel Enhancement Mode Power MOSFET
HM4480 N-Channel Enhancement Mode Power MOSFET
HM4482 N-Channel Enhancement Mode Power MOSFET
HM4484 N-Channel Enhancement Mode Power MOSFET
HM4485 P-Channel Enhancement Mode Power MOSFET
HM4485A P-Channel Enhancement Mode Power MOSFET
HM4485B P-Channel Enhancement Mode Power MOSFET
HM4485C MOSFET
HM4485E MOSFET

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