HM4487 Datasheet and Specifications PDF

The HM4487 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. D G General Features ●.

* VDS =-100V,ID =-4.5A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)
* Super high dense cell design
* Advanced trench process technology
* Reliable and rugged
* High density cell design for ultra low On-Resistance S Schematic diagram HM4487 Application
* Power management in notebook computer
* Portable e.

HM4487-VB HM4487-VB Datasheet P-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 100 0.160 at VGS = - 10 V 0.200 at VGS = - 4.5 V ID (A) - 2.5c - 2.3c Qg (Typ.).

* Trench Power MOSFET
* 100% Rg and UIS Tested APPLICATIONS
* Active Clamp in Intermediate DC/ DC Power Supplies
* H-Bridge High Side Switch for Lighting Application S S1 S2 S3 G4 8D 7D 6D 5D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol .