HM4488 Datasheet and Specifications PDF

The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =5.2A RDS(ON.

* VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V （Typ：31mΩ） Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Low gate to drain charge to reduce switching losses +0 Application
* Power switching application
* Hard switche.

HM4488-VB HM4488-VB Datasheet N-Channel 150 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 0.040 at VGS = 10 V 0.035 at VGS = 8 V ID (A)a 7.7 7.5 Qg (Typ.) 23 nC S1 S.

* Halogen-free According to IEC 61249-2-21 Definition
* Extremely Low Qgd for Switching Losses
* 100 % Rg Tested
* 100 % Avalanche Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Primary Side Switch D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) .