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HM3307B - N-Channel MOSFET

General Description

Applications Synchronous Rectification Power Management in Inverter System Switching Time Test Circuit and Waveforms HM3307B Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking HM3307B Device HM3307B Device Package TO-220-3L Reel

Key Features

  • VDSS=70V／VGSS=±25V／ID=114A RDS(ON)=8mΩ(max. )@VGS=10V.
  • Low Dense Cell Design.
  • Reliable and Rugged.
  • Advanced trench process technology  Pin.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM3307B 70VDS／±25VGS／114A(ID) N-Channel Enha ncement Mode MOSFET Features  VDSS=70V／VGSS=±25V／ID=114A RDS(ON)=8mΩ(max.)@VGS=10V  Low Dense Cell Design  Reliable and Rugged  Advanced trench process technology  Pin Description Applications  Synchronous Rectification  Power Management in Inverter System Switching Time Test Circuit and Waveforms HM3307B Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking HM3307B Device HM3307B Device Package TO-220-3L Reel Size - Tape width - Page 1 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.