Datasheet Details
| Part number | HM3306 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 800.92 KB |
| Description | N-Channel MOSFET |
| Datasheet | HM3306-HMSemiconductor.pdf |
|
|
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| Part number | HM3306 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 800.92 KB |
| Description | N-Channel MOSFET |
| Datasheet | HM3306-HMSemiconductor.pdf |
|
|
|
HM330 Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking HM330 Device HM330 Device Package TO-220-3L Reel Size - Tape width - Page 1 Quantity - Electrical Characteristics of CP Test (TA=25°C unless otherwise noted) Symbol Parameter Test Conditions Min.
Typ Max.
Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250uA 60 V IDSS Zero Gate Voltage Drain Current VDS=48V,VGS=0V TJ=85°C VGS(th) Gate Threshold Voltage VDS=VGS,ID=250uA 2 1 30 uA 2.8 4V IGSS RDS(on) VSD RG Gate Leakage Current Drain-Source On-Resistance Diode Forward Voltage Gate Resistance VGS=±25V, VDS=0V VGS=10V, ID=40A ISD=30A,VGS=0V VGS=0V, VDS=0V, Frequency=1MHz ±100 nA 3.5 5 mΩ 1.3 V 1.7 Ω
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