HM3018JR Datasheet | H&M Semiconductor

J e PMNUgo SOT-723 Plastic-Encapsulate MOSFETS HM3018JR N-Channel MOSFET V(BR)DSS RDS(on)MAX 8Ω@4V 30 V 13Ω@2.5V 100m A SOT-723 1. GATE 2. SOURCE 3. DRAIN FEATURE z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for Portable equipment z Drive circuits can be simple z Parallel use is easy MARKING APPLICATION z Interfacing , Switching Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-source voltage Gate-source voltage Continuous drain current Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature - Pw≤10µs ,Duty cycle≤1% Symbol VDS VGS ID PD RθJA TJ Tstg Value 30 ±20 ±100 0.15 833 150 -55 ~+150 Unit V m A W ℃/W ℃ MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Drain-source breakdown voltage V(BR) DSS Gate-source leakage...