HM30DN02D Description
The HM30DN02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM30DN02D Key Features
- VDS =20V,ID =30A RDS(ON) <7mΩ @ VGS=10V RDS(ON) <8mΩ @ VGS=4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
- Tape width