HM30DN02D Datasheet | H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET Description The HM30DN02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =20V,ID =30A RDS(ON) <7mΩ @ VGS=10V RDS(ON) <8mΩ @ VGS=4.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Schematic diagram Top View 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking HM30DN02D Device HM30DN02D Device Package DFN5X6-8L Reel Size - Tape width - Quantity -...