HM3018KR
HM3018KR is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Silicon N-channel MOSFET 100 m A, 30 V
- Features
1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel.
- ESD>500V
- We declare that the material of product pliance with Ro HS requirements.
- S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous Pulsed
Total power dissipation (Tc=25°C)
IDP∗1 PD∗2
Channel temperature
Tch
Storage temperature
Tstg
∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the remended lands.
Limits 30
±20 ±100 ±400 200 150
- 55 to +150
Unit V V m A m A m W °C °C
ORDERING INFORMATION
D evice HM.5
Marking...
