HM4618SP
HM4618SP is Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor manufactured by H&M Semiconductor.
HM4618SP mon-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Description
The HM4618SP uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its mon-drain configuration.
Package Dimensions
Unit : mm
General Features
- VSSS =20V,IS =6A
- 2.5V drive
- mon-drain type
- 2KV HBM
Package Information
- Minimum Packing Quantity : 5,000 pcs./reel
Application
- Lithium-ion battery charging and discharging switch
Equivalent Circuit
Marking and pin assignment
CSP top...
