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HM4618B Datasheet

N & P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM4618B Overview

The HM4618B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

HM4618B Key Features

  • N-Channel VDS =40V,ID =8A RDS(ON) < 19mΩ @ VGS=10V RDS(ON) < 29mΩ @ VGS=4.5V
  • P-Channel VDS =-40V,ID = -7A RDS(ON) <35mΩ @ VGS=-10V RDS(ON) < 45mΩ @ VGS=-4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package

More Datasheets from H&M Semiconductor

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HM4618B Distributor