HM4616Q
HM4616Q is N And P-Channel Enhancement Mode MOSFET manufactured by H&M Semiconductor.
N And P-Channel Enhancement Mode MOSFET
Description
The HM4616Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
- N-channel：
VDS =30V,ID =28A RDS(ON)=12mΩ (typical) @ VGS=10V RDS(ON)=14mΩ (typical) @ VGS=4.5V P-Channel：
VDS =-30V,ID =-18A RDS(ON)=22mΩ (typical) @ VGS=-10V RDS(ON)=30mΩ (typical) @ VGS=-4.5V
- Excellent gate charge x RDS(ON) product(FOM)
- Very low on-resistance RDS(ON)
- 150 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
100% UIS TESTED!
Application
100% ∆Vds...
