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HM4616D Datasheet N And P-channel Enhancement Mode MOSFET

Manufacturer: H&M Semiconductor

Overview: HM' N And P-Channel Enhancement Mode MOSFET.

General Description

Schematic diagram The HM4616D uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General

Key Features

  • N-channel： VDS =30V,ID =35A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=7.8mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V,ID =-18A RDS(ON)=15mΩ (typical) @ VGS=-10V RDS(ON)=20mΩ (typical) @ VGS=-4.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested 100% UIS TESTED!.

More Datasheets from H&M Semiconductor

Part Number Description
HM4616 N & P-Channel Enhancement Mode Power MOSFET
HM4616A N & P-Channel Enhancement Mode Power MOSFET
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HM4611 N and P-Channel Enhancement Mode Power MOSFET
HM4611A N & P-Channel Enhancement Mode Power MOSFET
HM4611B N & P-Channel Enhancement Mode Power MOSFET
HM4611Q N And P-Channel Enhancement Mode MOSFET
HM4612 N & P-Channel Enhancement Mode Power MOSFET
HM4612D N & P-Channel Enhancement Mode Power MOSFET
HM4614 N & P-Channel Enhancement Mode Power MOSFET

HM4616D Distributor