HM4853B
HM4853B is P-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
P-Channel Enhancement Mode Power MOSFET
Description
The HM4853B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
D1 G1
G2
D2
S1 S2
Schematic diagram
General Features
- VDS = -12V,ID = -8A RDS(ON) < 30mΩ @ VGS=-4.5V RDS(ON) < 45mΩ @ VGS=-2.5V
- High power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- Motor drive
- Load switch
- Power management
Marking and pin assignment SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500...
