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HM4853 Datasheet

P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM4853 Overview

The +0 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D1 G1 G2 D2 S1 S2 Schematic diagram General.

HM4853 Key Features

  • VDS = -20V,ID = -9A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package
  • Motor drive
  • Load switch
  • Power management

More Datasheets from H&M Semiconductor

See all H&M Semiconductor datasheets

Part Number Description
HM4853A P-Channel Enhancement Mode Power MOSFET
HM4853B P-Channel Enhancement Mode Power MOSFET
HM4850 Dual N-Channel Enhancement Mode Power MOSFET
HM4803 Dual P-Channel Enhancement Mode Power MOSFET
HM4805 Dual P-Channel Enhancement Mode Power MOSFET
HM4805A Dual P-Channel Enhancement Mode Power MOSFET
HM4805B Dual P-Channel Enhancement Mode Power MOSFET
HM4806B Dual N-Channel Enhancement Mode Power MOSFET
HM4806D Dual N-Channel Enhancement Mode Power MOSFET
HM4812 Dual N-Channel Enhancement Mode Power MOSFET

HM4853 Distributor