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HM4853B Datasheet

Manufacturer: H&M Semiconductor
HM4853B datasheet preview

HM4853B Details

Part number HM4853B
Datasheet HM4853B-HMSemiconductor.pdf
File Size 480.90 KB
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
HM4853B page 2 HM4853B page 3

HM4853B Overview

The HM4853B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D1 G1 G2 D2 S1 S2 Schematic diagram General.

HM4853B Key Features

  • VDS = -12V,ID = -8A RDS(ON) < 30mΩ @ VGS=-4.5V RDS(ON) < 45mΩ @ VGS=-2.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package
  • Motor drive
  • Load switch
  • Power management

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