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HM4853B Datasheet

P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM4853B Overview

The HM4853B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D1 G1 G2 D2 S1 S2 Schematic diagram General.

HM4853B Key Features

  • VDS = -12V,ID = -8A RDS(ON) < 30mΩ @ VGS=-4.5V RDS(ON) < 45mΩ @ VGS=-2.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package
  • Motor drive
  • Load switch
  • Power management

HM4853B Distributor