HM9926B Datasheet (H&M Semiconductor)

Part HM9926B
Description Dual N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer H&M Semiconductor
Size 485.03 KB
H&M Semiconductor

HM9926B Overview

Description

The HM9926B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Key Features

  • VDS =20V,ID =5A RDS(ON) < 50mΩ @ VGS=4.5V RDS(ON) < 63mΩ @ VGS=2.5V - High density cell design for ultra low Rdson
  • Fully characterized Avalanche voltage and current