HM8810B Key Features
- VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
- PWM application -Load switch
HM8810B is Dual N-Channel MOSFET manufactured by H&M Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
VBsemi |
HM8810A | Dual N-Channel MOSFET |
The HM8810% uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.