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HAMAMATSU

L9277 Datasheet Preview

L9277 Datasheet

CW Laser Diode

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IFEATURES
GRadiant output power (CW): 1 W
GPeak emission wavelength: 830 nm
GEmitting area size: 50 µm × 1 µm
IAPPLICATIONS
GPumping source for solid state laser
GProcessing
GMedical instrument
GMeasuring instrument
Lateral multimode (broad stripe)
CW Laser Diode
L9277 Series
IABSOLUTE MAXIMUM RATINGS (Top(C) = 25 °C)
Parameter
Radiant output power
Forward current
Reverse voltage
Operating temperature
Storage temperature
Symbol
Φe
If
Vr
Top(c)
Tstg
Value
35
140
1.5
0 to +50
-20 to +80
Unit
mW
mA
V
°C
°C
IELECTRICAL AND OPTICAL CHARACTERISTICS (Top(C) = 25 °C)
Parameter
Symbol
Radiant output power
Forward current
Peak emission wavelength
Spectral radiation half bandwidth
Φe
Iop
λc
∆λ
Conditions
If = 1.2 A
Φe = 1 W
Value
Min. Typ.
—1
— 1.2
— 830
—2
Forward voltage
Beam spread angle
Emitting area
Parallel
Vertical
Vop
θ// Φe = 1 W
θFWHM
— Value at designing
2
8
32
50 × 1
Lasing threshold current
Ith
— 0.35
Max.
Unit
W
A
nm
nm
V
degree
degree
µm
A
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2012 Hamamatsu Photonics K.K.




HAMAMATSU

L9277 Datasheet Preview

L9277 Datasheet

CW Laser Diode

No Preview Available !

Lateral multimode (broad stripe) CW Laser Diode L9277 Series
Figure 1: Radiant output power vs. Forward current (typ.)
(Top(C) = 25 °C)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Forward current If (A)
Figure 2: Typical emission spectrum
100 (Top(C) = 25 °C, Φe = 1 W)
90
80
70
60
50
40
30
20
10
0
820 825 830 835 840
Wavelength (nm)
Figure 3: Directivity (typ.)
100 (Top(C) = 25 °C, Φe = 1 W)
90
80
Parallel θ//
70
60
50
Vertical θ
40
30
20
10
0
-60 -40 -20 0 20 40 60
Angle (degree)
Figure 4: Dimensional outline (unit: mm)
G L9277-42
9.0CD
9.0
+0
- 0.1
7.0 MAX.
5.7±0.2
LD chip
Glass window
2.0 MIN.
G L9277-62
Side Out OHS
Light output
0.45±0.05
Lead
2.54±0.2
1.0
LD
N.C.
LD cathode
LD anode
(Case)
LD chip
1.8±0.1
10.0±0.3
2.4±0.1
4.0±0.3
3.0±0.1
6.0±0.1
G L9277-72
Head Out OHS
4.0±0.3
LD chip
Light output
1.9±0.2
LD anode
LD cathode
2.2±0.1
6.0±0.1
LD anode
LD cathode
HAMAMATSU PHOTONICS K.K. www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Laser Group, Sales Dept.
1-8-3, Shinmiyakoda, Kita-ku, Hamamatsu City, Shizuoka, 431-2103, Japan, Telephone: (81)53-484-1301, Fax: (81)53-484-1302, E-mail: laser-g@lsr.hpk.co.jp
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 SE-164 40 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it
Cat. No. LCWLD2012E01
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, 27 Dongsanhuan Road North, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: hpc@hamamatsu.com.cn OCT. 2012 IP


Part Number L9277
Description CW Laser Diode
Maker HAMAMATSU
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