H2N60U - N-Channel MOSFET

Product Overview

HAOHAI

Part number	H2N60U
Manufacturer	HAOHAI
File Size	395.16 KB
Description	N-Channel MOSFET
Datasheet	H2N60U Datasheet
Additional preview pages of the H2N60U datasheet.

　Originative New Design 　　Superior Avalanche Rugged Technology 　　Robust Gate Oxide Technology 　　Very Low Intrinsic Capacitances 　　Excellent Switching Characteristics 　　Unrivalled Gate Charge: 5.5nC(Typ. ) 　　Extended Safe Operating Area 　　Lower RDS(ON): 4.0Ω(Typ. ) @ VGS=10V 　　100% Avalanche Tested 　　Package: TO-251 & TO-252（IPAK & DPAK） ID=1.8A BVDSS=600V RDS(on)=4.0Ω 　.
　　,,,,,RoHS 　.
　　、LCD、LED、、UPS、　　、、、、、、　　、、　.
　　TO-251（IPAK）　　TO-252（DPAK） 2N60 Series Pin Assignment 3-Lea.

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Published: Sep 29, 2018 |