* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 5.5nC(Typ.) Extended Safe Operating Area Lower RDS(ON): 4.0Ω(Typ.) @ VGS=10V 100% Avalanche Tested
H2N60U
HAOHAI
395.16 KB
N-channel mosfet.
2A, 600V, N H FQU2N60C FQD2N60C H2N60U H2N60D 2N60 HAOHAI U: TO-251 D: TO-252 80/ 2.5K/ 2N60 Series N-Channel MOSFET 4Kpcs/ 5K.
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