Datasheet Summary
HG RF POWER TRANSISTOR
Semiconductors
ROHS pliance,Silicon NPN POWER TRANSISTOR
DESCRIPTION
2SC2904 is a silicon NPN epitaxial planar type transistor specif ically designed f or high power amplif iers applications in HF band.Output stage of transmitter in HF band SSB mobile radio sets.
Features
- -
- - Specified 12.5V, 30MHz Characteristics PO = 100W PEP GP ≥ 11.5dB. at 100 W/30 MHz Omnigold™ Metalization System
DIMENSIONS
UNIT mm
1.EMITTER 2.EMITTER 3.BASE 4.Collector 5.EMITTER 6.EMITTER 7.FIN
A B C D E F G H I J K L M N O P 4.3 5.3 8.3 12.4 7.0 11.3 12.9 18.8 25.6 4.5 0.16 3.5 6.8 R-1.6 R-3.2...
