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2SC2904 Datasheet Preview

2SC2904 Datasheet

Silicon NPN POWER TRANSISTOR

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HG
Semiconductors
HG RF POWER TRANSISTOR
2SC2904
ROHS Compliance,Silicon NPN POWER TRANSISTOR
DESCRIPTION
2SC2904 is a silicon NPN epitaxial planar type transistor
specif ically designed f or high power amplif iers applications
in HF band.Output stage of transmitter in HF band SSB
mobile radio sets.
FEATURES
D
H
G
D
Specified 12.5V, 30MHz Characteristics
PO = 100W PEP
GP 11.5dB. at 100 W/30 MHz
Omnigold™ Metalization System
DIMENSIONS
N
M
A AA
I
246
135
A
C
B
J
A
C
K
L
7 EF
1.EMITTER
2.EMITTER
3.BASE
4.Collector
P 5.EMITTER
O 6.EMITTER
7.FIN
UNIT A B C D E F G H I J K L M N O P
mm
4.3
3.7
5.3
4.7
8.3
7.5
12.4
11.6
7.0
5.8
11.3
10.7
R- 1.6
R- 3.2
R- 1
12.9
12.5
18.8
18.2
25.6
24.4
4.5
3.5
0.16
0.07
3.5
2.9
6.8
5.4
MAXIMUM RATINGS
CHARACT ERIST ICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Emitter-Base Voltage
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SY MBOL
VCBO
VCEO
IC
VEBO
PDISS
TJ
T STG
ELECTRICAL CHARACTERISTICS
RAT INGS
50
20
22
5
200
175
-55 to 175
UNIT S
V
V
A
V
W
°C
°C
CHARACT ERIST ICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector cutoff current
Emitter cutoff current
DC Current Gain
Power Gain
Output Power
Collector Efficiency
SY MBOL
TEST CONDITIONS
V(BR)CEO IC=100mA,IB=0
V(BR)CBO IC=20mA,IE=0
V(BR)EBO IE=20mA,IC=0
ICBO VCB=15V,IE=0
IEBO VEB=3V,IC=0
hFE VCE=10V,IC=1A
GP VCC=12.5V,PO=100W,f=30MHZ
Po VCC=12.5V,Pin=7W
ηC f=30MHZ
MIN.
20
50
5
-
-
10
11.5
100
55
TYP. MAX. UNITS
--
V
--
V
--
V
- 5.0 mA
- 5.0 mA
50 180
- dB
110 W
60 %
Note : Above parameters , ratings , limits and conditions are subject to change
www.HGSemi.com
Sep. 1998
Free Datasheet http://www.Datasheet4U.com


Part Number 2SC2904
Description Silicon NPN POWER TRANSISTOR
Maker HGSemi
Total Page 1 Pages
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