HD8205-LOW - N-Channel Enhancement Mode Power MOSFET

Download the HD8205-LOW datasheet PDF (HD8205-LOW-HI included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel enhancement mode power mosfet.

Description

The 8205-LOW uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram.

HI-DEVICE

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Datasheet Details

Part number	HD8205-LOW
Manufacturer	HI-DEVICE
File Size	263.18 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HD8205-LOW Datasheet

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Full PDF Text Transcription

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HD8205-LOW N-Channel Enhancement Mode Power MOSFET Description The 8205-LOW uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.

Published: Mar 23, 2015 |