HD8205A Datasheet | HI-DEVICE

N-Channel Enhancement Mode Power MOSFET Description The HD8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features - VDS = 20V, ID = 6A RDS(ON) < 34mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin Assignment Application - Battery protection - Load switch - Power management TSSOP-8 top...