HD8205-LOW Datasheet | HI-DEVICE

N-Channel Enhancement Mode Power MOSFET Description The 8205-LOW uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features - VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Application - Battery protection - Load switch - Power...