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HD8205-LOW - N-Channel Enhancement Mode Power MOSFET

Download the HD8205-LOW datasheet PDF. This datasheet also covers the HD8205-LOW-HI variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The 8205-LOW uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HD8205-LOW-HI-DEVICE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HD8205-LOW
Manufacturer HI-DEVICE
File Size 263.18 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HD8205-LOW Datasheet

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Other Datasheets by HI-DEVICE

Part Number Description
HD8205 Dual N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HD8205-LOW N-Channel Enhancement Mode Power MOSFET Description The 8205-LOW uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.