H01N60 transistor equivalent, n-channel power field effect transistor.
* 1A, 600V, RDS(on)=8Ω@VGS=10V
* Low Gate Charge 15nC(Typ.)
* Low Crss 4pF(Typ.)
* Fast Switching
* Improved dv/dt Capability
Absolute Maximum Ratings.
in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits whe.
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