| Title | |
| Description | This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching... |
| Features |
• 1A, 600V, RDS(on)=8Ω@VGS=10V • Low Gate Charge 15nC(Typ.) • Low Crss 4pF(Typ.) • Fast Switching • Improved dv/dt Capability Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current (Continuous TC=25oC) Drain Current (Continuous TC=100oC) Drain Current (Pulsed) *1 Gate-Source Voltage Single... |
| Datasheet |
 H01N60 Datasheet - 57.53KB |
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