H01N60 Datasheet - HI-SINCERITY

N-Channel Power Field Effect Transistor

H01N60 Features

* 1A, 600V, RDS(on)=8Ω@VGS=10V

* Low Gate Charge 15nC(Typ.)

* Low Crss 4pF(Typ.)

* Fast Switching

* Improved dv/dt Capability Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current (Continuous TC=25oC

H01N60 General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer.

H01N60 Datasheet (57.53 KB)

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Datasheet Details

Part number:

H01N60

Manufacturer:

HI-SINCERITY

File Size:

57.53 KB

Description:

N-channel power field effect transistor.

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H01N60 N-Channel Power Field Effect Transistor HI-SINCERITY

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H01N60 Features

H01N60 General Description

Datasheet Details

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Description:

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