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H02N60S - N-Channel Power FET

Download the H02N60S datasheet PDF. This datasheet also covers the H02N60S-HI variant, as both devices belong to the same n-channel power fet family and are provided as variant models within a single manufacturer datasheet.

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Features

  • Robust High Voltage Termination.
  • Avalanc he Energy Specified.
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
  • Diode is Characterized for Use in Bridge Circuits.
  • IDSS and VDS(on) Specified at Elevated Temperature Absolute Maximum Ratings H02N60S Series Pin Assignment Tab 3 2 1 Tab 3 2 Tab 1 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-251 Package Code: I Pin 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H02N60S-HI-SINCERITY.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H02N60S
Manufacturer HI-SINCERITY
File Size 73.78 KB
Description N-Channel Power FET
Datasheet download datasheet H02N60S Datasheet

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Other Datasheets by HI-SINCERITY

Part Number Description
H02N60SE N-Channel Power FET
H02N60SF N-Channel Power FET
H02N60SI N-Channel Power FET
H02N60SJ N-Channel Power FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
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