H02N60SF Datasheet | HI-SINCERITY

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients. Features - Robust High Voltage Termination - Avalanc he Energy Specified - Source-to-Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode - Diode is Characterized for Use in Bridge Circuits - IDSS and VDS(on) Specified at Elevated...