H02N60SI Key Features
- Robust High Voltage Termination
- Avalanc he Energy Specified
- Source-to-Drain Diode Recovery Time parable to a Discrete Fast
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Part: H02N60SI
- Manufacturer: HI-SINCERITY
- Size: 73.78 KB
Related HI-SINCERITY Datasheets
| Part Number | Description |
|---|---|
| H02N60S | N-Channel Power FET |
| H02N60SE | N-Channel Power FET |
| H02N60SF | N-Channel Power FET |
| H02N60SJ | N-Channel Power FET |
H02N60SI Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.