H02N60SI - N-Channel Power FET

HI-SINCERITY

Download the H02N60SI datasheet PDF. This datasheet also covers the H02N60S-HI variant, as both devices belong to the same n-channel power fet family and are provided as variant models within a single manufacturer datasheet.

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H02N60SI n-channel power fet by HI-SINCERITY - Datasheet Preview — Note: The manufacturer provides a single datasheet file (H02N60S-HI-SINCERITY.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	H02N60SI
Manufacturer	HI-SINCERITY
File Size	73.78 KB
Description	N-Channel Power FET
Datasheet	H02N60SI Datasheet

General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

The new energy efficient design also offers a drain-to-source diode with a fast recovery time.

Overview

HI-SINCERITY MICROELECTRONICS CORP.

Spec.

No.

Key Features

Robust High Voltage Termination.
Avalanc he Energy Specified.
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
Diode is Characterized for Use in Bridge Circuits.
IDSS and VDS(on) Specified at Elevated Temperature Absolute Maximum Ratings H02N60S Series Pin Assignment Tab 3 2 1 Tab 3 2 Tab 1 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-251 Package Code: I Pin 1.

More Datasheets from HI-SINCERITY

Part Number	Description
H02N60S	N-Channel Power FET
H02N60SE	N-Channel Power FET
H02N60SF	N-Channel Power FET
H02N60SJ	N-Channel Power FET