Part number: H02N60SI
Manufacturer: HI-SINCERITY
File Size: 73.78KB
Download: 📄 Datasheet
Description: N-Channel Power FET
* Robust High Voltage Termination
* Avalanc he Energy Specified
* Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
* Diode.
in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits whe.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation.
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