H02N60SJ Datasheet - HI-SINCERITY

N-Channel Power FET

H02N60SJ Features

* Robust High Voltage Termination

* Avalanc he Energy Specified

* Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

* Diode is Characterized for Use in Bridge Circuits

* IDSS and VDS(on) Specified at Elevated Temperature Absolute

H02N60SJ General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer.

H02N60SJ Datasheet (73.78 KB)

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Datasheet Details

Part number:

H02N60SJ

Manufacturer:

HI-SINCERITY

File Size:

73.78 KB

Description:

N-channel power fet.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel.

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H02N60SJ N-Channel Power FET HI-SINCERITY

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H02N60SJ Features

H02N60SJ General Description

Datasheet Details

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