H05N60E - N-Channel Power Field Effect Transistor

Product Overview

HI-SINCERITY

Part number	H05N60E
Manufacturer	HI-SINCERITY
File Size	56.83 KB
Description	N-Channel Power Field Effect Transistor
Datasheet	H05N60E Datasheet
Note	This datasheet PDF includes multiple part numbers: H05N60E, H05N60E-Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the H05N60E datasheet.

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode with fast recovery time.

Higher Current Rating.
Lower RDS(on).
Lower Capacitances.
Lower Total Gate Charge.
Tighter VSD Specifications.
Avalanche Energy Specified Absolute Maximum Ratings H05N60 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3 2 1 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3 2 1 D H05N60 Series Symbol: G S Symbol ID IDM VGS PD Tj, Tst.

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Published: Jun 16, 2019 |