H05N60E Datasheet N-channel Power Field Effect Transistor

Manufacturer: HI-SINCERITY

Overview: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200603 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	H05N60E
Manufacturer	HI-SINCERITY
File Size	56.83 KB
Description	N-Channel Power Field Effect Transistor
Datasheet	H05N60E H05N60E-Hi Datasheet (PDF)

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode with fast recovery time.

Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.

Higher Current Rating.
Lower RDS(on).
Lower Capacitances.
Lower Total Gate Charge.
Tighter VSD Specifications.
Avalanche Energy Specified Absolute Maximum Ratings H05N60 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3 2 1 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3 2 1 D H05N60 Series Symbol: G S Symbol ID IDM VGS PD Tj, Tst.

Part Number	Description
H05N60F	N-Channel Power Field Effect Transistor