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H05N60F Datasheet N-Channel Power Field Effect Transistor

Manufacturer: HI-SINCERITY

Download the H05N60F datasheet PDF. This datasheet also includes the H05N60E-Hi variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (H05N60E-Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H05N60F
Manufacturer HI-SINCERITY
File Size 56.83 KB
Description N-Channel Power Field Effect Transistor
Datasheet download datasheet H05N60F Datasheet

General Description

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode with fast recovery time.

Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.

Overview

HI-SINCERITY MICROELECTRONICS CORP.

Spec.

No.

Key Features

  • Higher Current Rating.
  • Lower RDS(on).
  • Lower Capacitances.
  • Lower Total Gate Charge.
  • Tighter VSD Specifications.
  • Avalanche Energy Specified Absolute Maximum Ratings H05N60 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3 2 1 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3 2 1 D H05N60 Series Symbol: G S Symbol ID IDM VGS PD Tj, Tst.

More Datasheets from HI-SINCERITY

Part Number Description
H05N60E N-Channel Power Field Effect Transistor