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H05N60E - N-Channel Power Field Effect Transistor

Download the H05N60E datasheet PDF (H05N60E-Hi included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel power field effect transistor.

Description

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode with fast recovery time.

Features

  • Higher Current Rating.
  • Lower RDS(on).
  • Lower Capacitances.
  • Lower Total Gate Charge.
  • Tighter VSD Specifications.
  • Avalanche Energy Specified Absolute Maximum Ratings H05N60 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3 2 1 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3 2 1 D H05N60 Series Symbol: G S Symbol ID IDM VGS PD Tj, Tst.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H05N60E-Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H05N60E
Manufacturer HI-SINCERITY
File Size 56.83 KB
Description N-Channel Power Field Effect Transistor
Datasheet download datasheet H05N60E Datasheet

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Full PDF Text Transcription

Click to expand full text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200603 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H05N60 Series N-Channel Power Field Effect Transistor Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.
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