Part H05N60F
Description N-Channel Power Field Effect Transistor
Category Transistor
Manufacturer HI-SINCERITY
Size 56.83 KB
HI-SINCERITY
H05N60F

Overview

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time.

  • Higher Current Rating
  • Lower RDS(on)
  • Lower Capacitances
  • Lower Total Gate Charge
  • Tighter VSD Specifications
  • Avalanche Energy Specified