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H07N60F - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the H07N60F, a member of the H07N60E-HI PNP EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The HSA733 is designed for use in driver stage of AF amplifier.

Features

  • High hFE and Excellent Linearity: 200 Typ. hFE(VCE=6.0,IC=1.0mA) Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage -60 V VCEO Collector to Emitter Voltage.

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Datasheet preview – H07N60F

Datasheet Details

Part number H07N60F
Manufacturer HI-SINCERITY
File Size 23.64 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet H07N60F Datasheet
Additional preview pages of the H07N60F datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HSP200204 Issued Date : 1998.01.06 Revised Date : 2002.03.26 Page No. : 1/3 HSA733SP PNP EPITAXIAL PLANAR TRANSISTOR Description The HSA733 is designed for use in driver stage of AF amplifier. Features • High hFE and Excellent Linearity: 200 Typ. hFE(VCE=6.0,IC=1.0mA) Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ...............................................................................
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