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HS50N06 - N-channel MOSFET

General Description

The HS50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed.

Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.

2.

Key Features

  • RDS(ON)=19mΩ(typical).
  • Ultra low gate charge (typical 30nC).
  • Low reverse transfer capacitance.
  • Fast switching capability.
  • 100％ avalanche energy specified.
  • Improved dv/dt capability 3. Pin configuration Coperight@ Guangz hou Chengq i Semiconductor Co. ,LTD. All rights reserved. www. homsemi. com 1/5 HS50N06 N channel MOSFET 4. Absolute maximum ratings Parameter Symbol Value Unit Drain to source voltage Gate to source voltage Continuous d.

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Datasheet Details

Part number HS50N06
Manufacturer HOMSEMI
File Size 2.28 MB
Description N-channel MOSFET
Datasheet download datasheet HS50N06 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HS50N06 N channel MOSFET 1.Description The HS50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching 2. Features „ RDS(ON)=19mΩ(typical) „ Ultra low gate charge (typical 30nC) „ Low reverse transfer capacitance „ Fast switching capability „ 100％ avalanche energy specified „ Improved dv/dt capability 3. Pin configuration Coperight@ Guangz hou Chengq i Semiconductor Co.,LTD.All rights reserved. www.homsemi.com 1/5 HS50N06 N channel MOSFET 4.