HS50N06 Description
The HS50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching.
HS50N06 Key Features
- RDS(ON)=19mΩ(typical)
- Ultra low gate charge (typical 30nC)
- Low reverse transfer capacitance
- Fast switching capability
- 100％ avalanche energy specified
- Improved dv/dt capability