HS50N06 - N-channel MOSFET

Datasheet Details

The HS50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed.

RDS(ON)=19mΩ(typical).
Ultra low gate charge (typical 30nC).
Low reverse transfer capacitance.
Fast switching capability.
100％ avalanche energy specified.
Improved dv/dt capability 3. Pin configuration Coperight@ Guangz hou Chengq i Semiconductor Co. ,LTD. All rights reserved. www. homsemi. com 1/5 HS50N06 N channel MOSFET 4. Absolute maximum ratings Parameter Symbol Value Unit Drain to source voltage Gate to source voltage Continuous d.

📁 HS50N06 Similar Datasheet

HS50N06PA - 60V Heatsink Planar N-Channel Power MOSFET (Thinki Semiconductor)
HS510 - Thyristor - SCR (Silicon-Controlled Rectifier) (Hind Rectifiers Ltd)
HS5104 - Infrared remote controller (HuaXin)
HS5131 - 8 Bit / 2.5uS ADC (Sipex Corp)
HS5150 - High Speed 8-Bit ADC (Hybrid Systems Corp)
HS5151 - Thick Film Chip Resistors (Stackpole Electronics Inc)
HS517R - Omnipolar CMOS Output Hall Effect Switch (ChipSourceTek)
HS527 - OTP Encoder (SilvanChip)

Other Datasheets by HOMSEMI

Published: Dec 12, 2018 |