HS50N06PA Key Features
- 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
- Low gate charge ( typical 31 nC)
- Low Crss ( typical 65 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating
- Part: HS50N06PA
- Manufacturer: Thinki Semiconductor
- Size: 1.10 MB
Other HS50N06PA Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
| HOMSEMI HOMSEMI |
HS50N06 | N-channel MOSFET |
| HOMSEMI HOMSEMI |
HS50N06DA | N-channel 60V MOSFET |