HS50N06 Key Features
- RDS(ON)=19mΩ(typical)
- Ultra low gate charge (typical 30nC)
- Low reverse transfer capacitance
- Fast switching capability
- 100％ avalanche energy specified
- Improved dv/dt capability
- Part: HS50N06
- Description: N-channel MOSFET
- Manufacturer: HOMSEMI
- Size: 2.28 MB
Other HS50N06 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Thinki Semiconductor |
HS50N06PA | 60V Heatsink Planar N-Channel Power MOSFET |