HS50N06 - N-channel MOSFET

Product Overview

Part number	HS50N06
Manufacturer	HOMSEMI
File Size	2.28 MB
Description	N-channel MOSFET
Datasheet	HS50N06 Datasheet
Additional preview pages of the HS50N06 datasheet.

The HS50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed.

Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.

RDS(ON)=19mΩ(typical).
Ultra low gate charge (typical 30nC).
Low reverse transfer capacitance.
Fast switching capability.
100％ avalanche energy specified.
Improved dv/dt capability 3. Pin configuration Coperight@ Guangz hou Chengq i Semiconductor Co. ,LTD. All rights reserved. www. homsemi. com 1/5 HS50N06 N channel MOSFET 4. Absolute maximum ratings Parameter Symbol Value Unit Drain to source voltage Gate to source voltage Continuous d.

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Published: Dec 12, 2018 |