Download the HY1320B datasheet PDF.
This datasheet also covers the HY1320 variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
DS G TO-220FB-3L
DS G TO-263-2L
Applications
Switching application
Power Management for Inverter Systems.
Key Features
200V/30 A
RDS(ON) = 63 mΩ (typ. ) @ VGS=10V.
100% avalanche tested.
Reliable and Rugged.
Lead Free and Green Devices Available
(RoHS Compliant)
Pin.
Full PDF Text Transcription for HY1320B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HY1320B. For precise diagrams, and layout, please refer to the original PDF.
HY1320P/B N-Channel Enhancement Mode MOSFET Features • 200V/30 A RDS(ON) = 63 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devi...
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100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY1320 HY1320 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P:TO-220FB-3L Date Code YYXXX WW B:TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
HY1320B Datasheet
