HOOYI datasheet | Specifications & PDF Download

HOOYI

HY4008 - N-Channel MOSFET

HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

Rating: 5 ★★★★★ (428 votes)

HOOYI

HY1707 - N-Channel MOSFET

HY1707P Features • 70V/80A, RDS(ON)= 6mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compl.

Rating: 5 ★★★★★ (201 votes)

HOOYI

HY5012W - N-Channel Enhancement Mode MOSFET

HY5012W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-S.

Rating: 3 ★★★ (131 votes)

HOOYI

HY3008P - N-Channel Enhancement Mode MOSFET

Rating: 3 ★★★ (128 votes)

HOOYI

HY3208P - N-Channel MOSFET

HY3208P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/120A R= DS(ON) 7.0 mΩ (typ.) @ V =10V GS • 100% avalanche tested • Relia.

Rating: 3 ★★★ (114 votes)

HOOYI

HY3810B - N-Channel Enhancement Mode MOSFET

HY3810P/M/B/PS/PM Features • 100V/180A RDS(ON) = 5.0 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .

Rating: 3 ★★★ (110 votes)

HOOYI

HY1403 - N-Channel MOSFET

HY1403D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/42A, RDS(ON)= 10 mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

Rating: 3 ★★★ (103 votes)

HOOYI

HY1906B - N-Channel Enhancement Mode MOSFET

HY1906P/B N-Channel Enhancement Mode MOSFET Features • 60V / 120 A , RDS(ON)= 6.0 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugge.

Rating: 2 ★★ (98 votes)

HOOYI

HY4008W - N-Channel MOSFET

HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

Rating: 2 ★★ (96 votes)

HOOYI

HY3215 - N-Channel Enhancement Mode MOSFET

HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS.

Rating: 2 ★★ (92 votes)

HOOYI

HY5608W - N-Channel Enhancement Mode MOSFET

HY5608W/A N-Channel Enhancement Mode MOSFET Features • 80V/360A RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

Rating: 2 ★★ (89 votes)

HOOYI

HY5608A - N-Channel Enhancement Mode MOSFET

HY5608W/A N-Channel Enhancement Mode MOSFET Features • 80V/360A RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

Rating: 2 ★★ (89 votes)

HOOYI

HY4008P - N-Channel MOSFET

HY4008P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rug.

Rating: 2 ★★ (80 votes)

HOOYI

HY1808AP - N-Channel MOSFET

HY1808AP/M/B/PS/PM Features • 80V/84A RDS(ON)= 6.2mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available.

Rating: 2 ★★ (78 votes)

Hooyi

HY3845 - (HY3842 / HY3845) PWM controller

HY3842/43/44/45 DESCRIPTION The HY3842D-N/3843D-N/3844D-N/3845D-N, are fixed frequency current mode PWM controller. They are specially designed for OF.

Rating: 2 ★★ (70 votes)

HOOYI

HY1001P - N-Channel Enhancement Mode MOSFET

HY1001M/P N-Channel Enhancement Mode MOSFET Features • 70V/75A, RDS(ON)=7.8mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free a.

Rating: 2 ★★ (67 votes)

HOOYI

HY1908PM - N-Channel Enhancement Mode MOSFET

HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged •.

Rating: 2 ★★ (63 votes)

HOOYI

HY1607 - N-Channel MOSFET

HY1607D/U/V N-Channel Enhancement Mode MOSFET Features • 68V/70A RDS(ON) = 6.8 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • L.

Rating: 2 ★★ (57 votes)

HOOYI

HY3610P - N-Channel Enhancement Mode MOSFET

HY3610P N-Channel Enhancement Mode MOSFET Features Pin Description • 100V/160A RDS(ON) = 4.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliabl.

Rating: 2 ★★ (52 votes)

HOOYI

HY3210PM - N-Channel Enhancement Mode MOSFET

HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .

Rating: 1 ★ (47 votes)

HOOYI Datasheet | Specifications & PDF Download