HOOYI Datasheet | Specifications & PDF Download

HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

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HY1707P Features • 70V/80A, RDS(ON)= 6mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compl

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HY3208P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/120A R= DS(ON) 7.0 mΩ (typ.) @ V =10V GS • 100% avalanche tested • Relia

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HY1403D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/42A, RDS(ON)= 10 mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex

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HY4008P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rug

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HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

(50 views)

HY1906P/B N-Channel Enhancement Mode MOSFET Features • 60V / 120 A , RDS(ON)= 6.0 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugge

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HY1607D/U/V N-Channel Enhancement Mode MOSFET Features • 68V/70A RDS(ON) = 6.8 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • L

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HY3810P/M/B/PS/PM Features • 100V/180A RDS(ON) = 5.0 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices

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HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged •

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HY5012W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-S

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HY3408P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS

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HY3842/43/44/45 DESCRIPTION The HY3842D-N/3843D-N/3844D-N/3845D-N, are fixed frequency current mode PWM controller. They are specially designed for OF

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HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices

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HY5608W/A N-Channel Enhancement Mode MOSFET Features • 80V/360A RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

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HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS

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HY3906P/B N-Channel Enhancement Mode MOSFET Features • 60V/190A RDS(ON) = 3.2 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

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HY19P03 D/U/V Feature P-Channel Enhancement Mode MOSFET Pin Description  -30V/-90A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 6.5mΩ(typ.)@VGS = 4.5V 

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HY1808P N-Channel Enhancement Mode MOSFET Features • 75V/85A, RDS(ON)= 8 m Ω (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free an

(20 views)