Datasheet4U Logo Datasheet4U.com

HYG015N10NS1TA Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HOOYI

Overview: HYG015N10NS1TA Feature  100V/380A RDS(ON)=1.2 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET.

Datasheet Details

Part number HYG015N10NS1TA
Manufacturer HOOYI
File Size 442.58 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG015N10NS1TA-HOOYI.pdf

General Description

Tab Pin 8 Pin 1 TOLL Applications  Switching application  Power management for inverter systems  Battery management Tab Pin 1 Ordering and Marking Information Pin 2,3,4,5,6,7,8 N-Channel MOSFET TA G015N10 XYMXXXXXX Package Code TA:TOLL Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HYG015N10NS1TA Distributor