Datasheet4U Logo Datasheet4U.com

HYG012N08NS1TA - N-Channel Enhancement Mode MOSFET

General Description

Tab Pin 8 Pin 1 TOLL Applications Switching application Power management for inverter systems Battery management Tab Pin 1 Ordering and Marking Information Pin 2,3,4,5,6,7,8 N-Channel MOSFET TA G012N08 XYMXXXXXX Package Code TA:TOLL Date Code XYMXXXXXX Note: HUAYI lead-free

📥 Download Datasheet

Datasheet Details

Part number HYG012N08NS1TA
Manufacturer HOOYI
File Size 599.68 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG012N08NS1TA Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HYG012N08NS1TA Feature  80V/420A RDS(ON)=0.9 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description Tab Pin 8 Pin 1 TOLL Applications  Switching application  Power management for inverter systems  Battery management Tab Pin 1 Ordering and Marking Information Pin 2,3,4,5,6,7,8 N-Channel MOSFET TA G012N08 XYMXXXXXX Package Code TA:TOLL Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.