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HYG012N08NS1TA Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HOOYI

Overview: HYG012N08NS1TA Feature  80V/420A RDS(ON)=0.9 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET.

Datasheet Details

Part number HYG012N08NS1TA
Manufacturer HOOYI
File Size 599.68 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG012N08NS1TA-HOOYI.pdf

General Description

Tab Pin 8 Pin 1 TOLL Applications  Switching application  Power management for inverter systems  Battery management Tab Pin 1 Ordering and Marking Information Pin 2,3,4,5,6,7,8 N-Channel MOSFET TA G012N08 XYMXXXXXX Package Code TA:TOLL Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

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