HY1607 - N-Channel MOSFET

HOOYI

General Description

G DS G DS TO-252-2L TO-251-3L Applications

Power Management for Inverter Systems.

Key Features

68V/70A RDS(ON) = 6.8 m(typ. ) @ VGS=10V.
100% avalanche tested.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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HY1607 n-channel mosfet by HOOYI - Datasheet Preview

Datasheet Details

Part number	HY1607
Manufacturer	HOOYI
File Size	649.84 KB
Description	N-Channel MOSFET
Datasheet	HY1607 Datasheet

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Other Datasheets by HOOYI

Part Number	Description
HY1607A	N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY1607D/U/V N-Channel Enhancement Mode MOSFET Features • 68V/70A RDS(ON) = 6.8 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description G DS G DS TO-252-2L TO-251-3L Applications  Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOSFET D HY1607 YYXXXJWW G U HY1607 YYXXXJWW G Package Code D : TO-252-2L Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS.