HY1607P - N-Channel MOSFET

HOOYI

General Description

68V/70A RDS(ON) = 6.5 mΩ (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D S D Applications Switching application

Power Management for Inverter Systems.

Key Features

Pin.

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Datasheet Details

Part number	HY1607P
Manufacturer	HOOYI
File Size	943.17 KB
Description	N-Channel MOSFET
Datasheet	HY1607P Datasheet

Full PDF Text Transcription for HY1607P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY1607P. For precise diagrams, and layout, please refer to the original PDF.

HY1607P N-Channel Enhancement Mode MOSFET Features Pin Description • 68V/70A RDS(ON) = 6.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free a...

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@ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) G D S D Applications • Switching application • Power Management for Inverter Systems. G S N-Channel MOSFET Ordering and Marking Information P HY1607 YYÿ WWJ G Package Code P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at

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